Photo-dielectric response enhancement and switching behavior of (1-x) (K0.5Na0.5)NbO3-xCa(Ni0.5Nb0.5)O3-δ ceramics by semiconduction method

The lead-free ferroelectric ceramics with high photo-dielectric response will contribute to developing new contactless photoelectric devices. The (1-x)(K0.5Na0.5)NbO3-xCa(Ni0.5Nb0.5)O3-delta (KNN-xCNN) ferroelectric semiconductive ceramics prepared by solid-phase sintering were used to investigate photo-dielectric behavior. After introducing the CNN component, the hysteresis loops of KNN-xCNN ceramics changed from the normal P -E loops to the pinched P -E loops, and the relaxation behavior was enhanced by the increase of diffusion coefficient from 1.16 to 1.85. The phase structure transformed from the orthogonal phase to the tetragonal phase. The grain size decreasing from 360 nm to 170 nm was refined. The bandgap decreased significantly from 2.29 eV to 1.40 eV. An obvious enhanced photo-dielectric response was achieved under ultraviolet light irradiation, which shows high dielectric tunability of similar to 387% at x = 0.015. Meanwhile, the switching behavior was analyzed by the capacitive ratio under light on and off state, which is about 5. These results pave the way for new photoelectric coupling devices such as photo-adjustable capacitor and capacitive switching. (C) 2021 Elsevier B.V. All rights reserved.

Automated summary

Lead-free ferroelectric ceramics with high photo-dielectric response show potential for developing new contactless photoelectric devices. Introducing multiple buried impurities can enhance the photo-dielectric response and improve dielectric tunability.