Journal
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
Volume 24, Issue 10, Pages 3184-3192Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TVLSI.2016.2535377
Keywords
Bridged-T network (BTN); circulator; CMOS; quasi-circulator (QC); radar; X-band
Funding
- Ministry of Science and Technology, Taiwan [MOST 103-2221-E-027-012]
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A three-port active circulator and an active quasi-circulator (QC) based on bridged-T networks (BTNs) are designed and fabricated in a standard 0.18-mu m CMOS technology. The BTN provides a notch frequency response, and therefore, the circulator is practical by connecting three BTNs in a ring-type configuration. With a power consumption of 18.2 mW, the circulator achieves 6.1 similar to 8-dB insertion loss, better than 25-dB isolation and 18.3-dB transmission ratio from 8.4 to 11.1 GHz. Furthermore, the QC based on one BTN topology can also be obtained by adding an external amplifier. With a power consumption of 18.6 mW, it achieves 7/-2-dB forward transmission gain, better than 17.3-dB isolation, and better than 15.3-dB transmission ratio at 9.9 GHz. The presented designs feature excellent performances in high isolation and transmission ratio compared with other CMOS active circulators or QCs. To the best of our knowledge, the designs are the first demonstration of three-port circulator/QC designs based on the BTN topology, and the design concept is also applicable to an n-port circulator design.
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