4.6 Article

Defect Characterization Using Positron Annihilation Spectroscopy on Laser-Ablated Surfaces

Journal

JOM
Volume 73, Issue 12, Pages 4221-4230

Publisher

SPRINGER
DOI: 10.1007/s11837-021-04965-8

Keywords

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Funding

  1. FUTURE (Fundamental Understanding of Transport Under Reactor Extremes), an Energy Frontier Research Center - U.S. Department of Energy (DOE)
  2. Impulse-und Networking fund of the Helmholtz Association [FKZ VH-VI-442]
  3. Helmholtz Energy Materials Characterization Platform [03ET7015]

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The study investigates the damage effects of materials treated with short, pulsed lasers using Doppler broadening and positron lifetime annihilation spectroscopy. Clusters of vacancy-like defects and small voids systematically increase with laser power in silicon single crystals, while the damage induced by the laser can reach micrometer depths.
In recent years, short, pulsed laser ablation has been gaining popularity for machining small-scale test geometries from bulk samples and for efficient serial sectioning. These laser-based techniques are being added to the toolbox in material science, which makes it necessary to understand the changes in the material that occur from the laser-material interaction. Positron annihilation spectroscopy is a unique, nondestructive technique to investigate small defects in materials difficult to investigate by other tools. In this work, Doppler broadening and positron lifetime annihilation spectroscopy are utilized to help quantify the damage in materials treated with short, pulsed lasers. Using a femtosecond laser on single crystal silicon, this manuscript shows that clusters of vacancy-like defects and small voids increase systematically with laser power. The damage induced by the laser can also reach to micrometer depths.

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