Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 61, Issue 2, Pages -Publisher
IOP Publishing Ltd
DOI: 10.35848/1347-4065/ac4392
Keywords
NiO; epitaxial; sputtering
Categories
Funding
- Nanotechnology Platform Program of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan [JPMXP09F19008645]
- JSPS KAKENHI [21K04696]
- Cooperative Research Program of Network Joint Research Center for Materials and Devices from the MEXT
- Renewable Energy Science and Technology Research Division of Tokyo University of Science, Japan
- Grants-in-Aid for Scientific Research [21K04696] Funding Source: KAKEN
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Epitaxial growths of NiO thin films were achieved on (0001) sapphire and (100) MgO substrates using a reactive RF magnetron sputtering method. The NiO epilayers on (0001) sapphire exhibited a (111)-oriented double-domain structure, while the NiO epilayers on (100) MgO exhibited a (100)-oriented single-domain structure. Mixed crystals of NiO and MgO were observed near the interface.
Epitaxial growths of NiO thin films were realized on (0001) sapphire and (100) MgO substrates by using a reactive RF magnetron sputtering method. The NiO epilayers grown on a (0001) sapphire exhibited the (111)-oriented double-domain structure, which comprised of a triangular and its inverted triangular grains. Meanwhile, the NiO epilayers on a (100) MgO exhibited the (100)-oriented single-domain structure, which comprised of quadrangular grains. The observed grain structures most likely reflect the growth planes of respective NiO epilayers, and, mixed crystals of NiO and MgO were present near the interface. Therefore, a (100) MgO substrate is suitable for obtaining a single-domain NiO epilayer, whereas a (0001) sapphire substrate is suitable for obtaining a NiO epilayer without interdiffusion between NiO and sapphire. These NiO epilayers will be expected for applying the physical properties evaluation using photoluminescence or Hall measurements, and the fabrication of electrical or optical devices.
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