Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 61, Issue SD, Pages -Publisher
IOP Publishing Ltd
DOI: 10.35848/1347-4065/ac4ce1
Keywords
electron beam; maskless lithography; electron emitter array; LSI for active matrix control
Categories
Funding
- Japan Society for the Promotion of Science (JSPS) through the Funding Program for World Leading Innovation R&D on Science and Technology (FIRST) program (2009-2013)
- special coordination funds for the promotion of science and technology through the Formation of Innovation Center for Fusion of Advanced Technologies program (2007-2016)
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A prototype of a massively parallel electron beam write system has been developed for maskless lithography. The system includes a nanocrystalline silicon electron emitter array and an active matrix-driving integrated device. The electron beams from the array are focused onto the wafer using electron optics. The operations of the array and the driving device were confirmed in a test system.
A prototype of a massively parallel electron beam write (MPEBW) system has been developed for maskless (direct-write) lithography. A 100 x 100 array of nanocrystalline silicon (nc-Si) electron emitters is controlled by an active matrix-driving large-scale integrated device. This device is designed so that arrayed electron beams are reduced by a factor of 100 using electron optics and focused onto the wafer as 10 nm square spots. The electron beam emitter array has an aberration correction function. A planar 10 mu m square nc-Si emitter array and the driving LSI device were fabricated and their operations were confirmed. A 17 x 17 nc-Si emitter array was assembled with driver circuits and used to perform active matrix electron beam exposure in a 1:1 exposure test system. A Pierce emitter array for the active matrix drive is the subject of the target commercial system. The operations of the Pierce emitter array were studied using basic prototyping and simulation.
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