Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 60, Issue 12, Pages -Publisher
IOP Publishing Ltd
DOI: 10.35848/1347-4065/ac3026
Keywords
AlN; sputtering; annealing; threading dislocation density; deep-ultraviolet light-emitting diode
Categories
Funding
- Ministry of Education, Culture, Sports, Science, and Technology under the Program for Building Regional Innovation Ecosystems
- Ministry of Education, Culture, Sports, Science, and Technology under the Program for Research and Development of Next-Generation Semiconductor to Realize Energy-Saving Society, Akasaki Research Center of Nagoya University [25000011]
- JSPS KAKENHI [JP15H03556, JP16H06415, JP16H06418, JP17H05335, JP19K15025, JP21K04903, JP21K14545]
- JST CREST [16815710]
- JST SICORP-EU [JPMJSC1608]
- JST SICORP
- MOST in China
- JST aXis [JPMJAS2011]
- Strategic Foundational Technology Improvement Support Operation by Kansai Bureau of Economy, Trade and Industry
- joint research program of the Institute of Materials and Systems for Sustainability (IMaSS) of Nagoya University
- Consortium for GaN Research and Applications, and NEDO leading research program
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This paper discusses the application potential of low-TDD FFA Sp-AlN templates in deep-ultraviolet light-emitting devices, and reviews recent progress in reducing threading dislocation density (TDD) and epitaxial growth of AlN and Al x Ga1-x N on FFA Sp-AlN. The achieved TDD on sapphire substrates with a 1.2 μm AlN film thickness was approximately 4 x 10(7) cm(-2). Additionally, the performance of DUV light-emitting diodes fabricated on FFA Sp-AlN is demonstrated, indicating the promising prospects of this approach.
AlN templates fabricated via a combination of sputtering deposition and post-deposition high-temperature face-to-face annealing can be applied to deep-ultraviolet (DUV) light-emitting devices because of their extremely low threading dislocation density (TDD) despite their low-cost and simple fabrication process. First, this paper summarizes the overview and essential crystalline characteristics of the face-to-face annealed sputter-deposited AlN template (FFA Sp-AlN). Thereafter, recent progress in the TDD reduction of the FFA Sp-AlN and the metalorganic vapor phase epitaxy of AlN and Al x Ga1-x N on the FFA Sp-AlN have been reviewed. The TDD of approximately 4 x 10(7) cm(-2) was obtained on the sapphire substrates with an AlN film thickness of 1.2 mu m. Finally, the potential of the low-TDD FFA Sp-AlN has been discussed by demonstrating the performances of DUV light-emitting diodes fabricated on the FFA Sp-AlN.
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