Fabrication of BaSi2 homojunction diodes on Nb-doped TiO2 coated glass substrates by aluminum-induced crystallization and two-step evaporation method

BaSi2 homojunction diodes on Nb-doped TiO2 (TiO2:Nb) coated glass substrates were fabricated using aluminum-induced crystallization (AIC) and a two-step evaporation method. From Raman scattering spectra, the growth of BaSi2 on TiO2:Nb was confirmed when the thickness of poly-Si grown by AIC (AIC-Si) was more than 150 nm. The partial formation of BaSi2 diodes was confirmed from the samples prepared at temperature during AIC T (AIC) = 475 degrees C-525 degrees C. The long-wavelength edge of photoresponsivity of the diodes was located around 950 nm, which corresponds to the bandgap of BaSi2 of 1.3 eV, suggesting that this photocurrent is derived from BaSi2 thin films. At T (AIC) = 500 degrees C, the maximum value of photoresponsivity was obtained. Since the largest grains in AIC-Si were also obtained at T (AIC) = 500 degrees C, these results suggest that larger grain of AIC-Si leads to the improvement of the quality of BaSi2 thin films themselves and the performance of BaSi2 diodes.

Automated summary

BaSi2 homojunction diodes on Nb-doped TiO2 coated glass substrates were successfully fabricated using aluminum-induced crystallization (AIC) and a two-step evaporation method. Raman scattering spectra confirmed the growth of BaSi2 on TiO2:Nb, and the formation of BaSi2 diodes was observed at temperatures ranging from 475°C to 525°C during AIC. The photoresponsivity of the diodes peaked at a wavelength of 950 nm, corresponding to the bandgap of BaSi2, with the highest value obtained at an AIC temperature of 500°C. The results also showed that larger grain size in AIC-Si contributed to the improved quality and performance of BaSi2 thin films.