Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 61, Issue 2, Pages -Publisher
IOP Publishing Ltd
DOI: 10.35848/1347-4065/ac468a
Keywords
ZnSnP2 solar cells; Emerging inorganic absorbers; DLTS; Point defects in semiconductors
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Funding
- JST CREST Grant [JPMJCR17J2]
- JSPS KAKENHI Grant [JP20H00302]
- U.S. Department of Energy (DOE) [DE-AC36-08GO28308]
- DOE Office of Science, Basic Energy Sciences, Materials Science and Engineering Division
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ZnSnP2, an emerging inorganic material for solar cells, was characterized using DLTS and PL, revealing shallow acceptor- and donor-like traps, as well as a deep level trap. These traps may result from defects in the material, leading to a shorter minority carrier lifetime.
ZnSnP2, an emerging inorganic material for solar cells, was characterized by deep level transient spectroscopy (DLTS) and photoluminescence (PL). Acceptor- and donor-like traps with shallow energy levels were detected by DLTS analysis. The previous study based on first-principle calculation also suggested such traps were due to antisite defects of Zn and Sn. PL measurements also revealed sub-gap transitions related to these trap levels. Additionally, DLTS found a trap with a deep level in ZnSnP2. A short lifetime of minority carrier in previous work might be due to such trap, coming from phosphorus vacancies and/or zinc interstitials suggested by the first-principle study.
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