Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure

Germanium-on-insulator (GeOI) structures with a surface orientation of (111) have been successfully fabricated by using low thermal budget epitaxial-lift-off (ELO) technology via direct bonding and selective etching. The material characteristics and transport properties of the Ge(111)OI structure have been systematically investigated through secondary-ion mass spectrometry, Raman spectroscopy, X-ray diffraction, high-resolution transmission electron microscope, and Hall measurement. The transferred Ge (111) layer remained almost intact from the as-grown epitaxial layers, indicating the benefits of ELO technology. The low thermal budget ELO technology demonstrated in this work is promising to integrate Ge channels with different surface orientations on Si (100) substrates for future monolithic 3D applications.

Automated summary

In this study, Germanium-on-insulator (GeOI) structures with a surface orientation of (111) were successfully fabricated using low thermal budget epitaxial-lift-off (ELO) technology. The material characteristics and transport properties of the Ge(111)OI structure were systematically investigated. The results indicate the potential of low thermal budget ELO technology for integrating Ge channels with different surface orientations.