Effects of gate width variation on the performance of Normally-OFF dual-recessed gate MIS AlGaN/GaN HEMT

Discovery of wideband gap semiconductor materials has boosted the field of power electronics. Fabrication of HEMT has overcome the drawback of lower mobility and ON-state current of wide bandgap materials. However, due to lower ON-state current earlier proposed devices suffer from poor ON-state resistance; hence, in this work dual gate technique has been proposed. To further switch the device characteristics from Normally-ON to Normally-OFF state, recessed gate technique is used. Device physics, analog parameters of Normally-OFF dual-recessed gate metal insulator semiconductor AlGaN/GaN HEMT (DRG-MIS-HEMT) are analyzed and compared with conventional DG-MIS-HEMT. To solidify the analysis, width of recessed gate has been varied from 2 nm to 28 nm. At recessed gate width (=28 nm), proposed device resulted R-ON = 1.98 omega-cm(2), threshold voltage 1.25 V, I-DS of 1100 mA/mm, I-ON/I-OFF = 10(14) and f(t) = 10 GHz. Proposed device also resulted in improved linearity characteristics over single gate structure. In future, the proposed device can be used for RF applications.

Automated summary

The discovery of wideband gap semiconductor materials has revolutionized power electronics, with the utilization of dual-recessed gate technique showing improved device performance and linearity characteristics. The proposed DRG-MIS-HEMT device exhibits promising results with a recessed gate width of 28 nm, making it a potential candidate for RF applications in the future.