Journal
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
Volume 29, Issue 4, Pages 349-354Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TSM.2016.2600593
Keywords
AlGaN/GaN HEMTs; mechanical stress; inverse piezoelectric effect; thermo-mechanical simulation; field plate; silicon nitride
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Mechanical stress is an important factor influencing the performance and reliability of GaN-based devices. In highly piezoelectric materials like AlGaN/GaN, mechanical stress directly influences the piezoelectric polarization, and hence the charge density of the 2-D electron gas. Fabrication processes for devices as well as device operating conditions can change the mechanical stress in AlGaN/GaN transistors. In this paper, the mechanical stress resulting from fabrication and operation of AlGaN/GaN transistors has been modeled using a finite element analysis approach. Specifically, the stress induced in AlGaN/GaN by chemical vapor deposition of silicon nitride films is discussed. Furthermore, the temperature-induced mechanical stress during on-state device operation is computed and the effect of source field plates and substrate materials has been investigated. Finally, the above-mentioned stress components are compared with those due to lattice mismatch, epi growth, and inverse piezoelectric effect. The potential impact of mechanical stress on device reliability is also discussed.
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