4.7 Article

Stochastic RUL Calculation Enhanced With TDNN-Based IGBT Failure Modeling

Journal

IEEE TRANSACTIONS ON RELIABILITY
Volume 65, Issue 2, Pages 558-573

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TR.2015.2499960

Keywords

Insulated gate bipolar transistor (IGBT); power electronics; prognostics; probability distribution function; remaining useful life (RUL); time-delay neural network

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Power electronics are widely used in the transport and energy sectors. Hence, the reliability of these power electronic components is critical to reducing the maintenance cost of these assets. It is vital that the health of these components is monitored for increasing the safety and availability of a system. The aim of this paper is to develop a prognostic technique for estimating the remaining useful life (RUL) of power electronic components. There is a need for an efficient prognostic algorithm that is embeddable and able to support on-board real-time decision-making. A time delay neural network (TDNN) is used in the development of failure modes for an insulated gate bipolar transistor (IGBT). Initially, the time delay neural network is constructed from training IGBTs' ageing samples. A stochastic process is performed for the estimation results to compute the probability of the health state during the degradation process. The proposed TDNN fusion with a statistical approach benefits the probability distribution function by improving the accuracy of the results of the TDDN in RUL prediction. The RUL (i.e., mean and confidence bounds) is then calculated from the simulation of the estimated degradation states. The prognostic results are evaluated using root mean square error (RMSE) and relative accuracy (RA) prognostic evaluation metrics.

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