Anomalous Thermal Expansion in Ta2WO8 Oxide Semiconductor over a Wide Temperature Range

Expansion of material is one of the major impediments in the high precision instrument and engineering field. Low/zero thermal expansion compounds have drawn great attention because of their important scientific significance and enormous application value. However, the realization of low thermal expansion over a wide temperature range is still scarce. In this study, a low thermal expansion over a wide temperature range has been observed in the Ta2WO8 oxide semiconductor. It is a balance effect of the negative thermal expansion of the a axis and the positive thermal expansion of the b axis and the c axis to achieve low thermal expansion behavior. The results of the means of variable temperature X-ray diffraction and variable pressure Raman spectroscopy analysis indicated that the transverse vibration of bridging oxygen atoms is the driving force, which is corresponding to the low-frequency lattice modes with a negative Gruneisen parameter. The present study provides one wide band gap semiconductor Ta2WO8 with anomalous thermal expansion behavior.

Automated summary

In this study, low thermal expansion over a wide temperature range was observed in the Ta2WO8 oxide semiconductor, achieved through a balance effect of the negative thermal expansion of the a axis and the positive thermal expansion of the b axis and the c axis. Analysis using variable temperature X-ray diffraction and variable pressure Raman spectroscopy identified the transverse vibration of bridging oxygen atoms as the driving force for this anomalous thermal expansion behavior.