4.6 Article

Cr2+:ZnS passively Q-switched Ho:GdTaO4 laser dual end-pumped by the laser diode

Journal

INFRARED PHYSICS & TECHNOLOGY
Volume 119, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.infrared.2021.103972

Keywords

Infrared lasers; Diode-pumped; Passive Q-switched; Ho; GdTaO4

Funding

  1. National Natural Science Foundation of China (NSFC) [61775053]
  2. Applied Technology Research and Development Project of Heilongjiang Province [GZ19J104]

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This paper presents a Ho:GTO laser dual end-pumped by a laser diode at 1.91 μm, achieving high output power and slope efficiency under CW regime, and utilizing Cr2+:ZnS as a saturable absorber to achieve small pulse width and high repetition rate. The Ho:GTO laser also demonstrated good beam quality factors and was successfully used as the pump source for a mid-infrared ZGP-OPO system, achieving high average output power and slope efficiency.
In this paper we present a continuous-wave (CW) and passively Q-switched (PQS) Ho:GdTaO4 (Ho:GTO) laser dual end-pumped by a laser diode at 1.91 mu m. Under CW regime, the dual diode-pumped Ho:GTO laser yielded 3.9 W output power and 53.0 % slope efficiency respect to the absorbed pump power. By using the Cr2+:ZnS as a saturable absorber, the average output power of 3.2 W, minimum pulse width of 11.2 ns and pulse repletion rate of 19.78 kHz were achieved. In addition, the beam quality factors (M2) in x- and y-directions of PQS dual diodepumped Ho:GTO laser were measured to be 1.28 and 1.44, respectively. Moreover, we firstly employed the PQS Ho:GTO laser as the pump source of middle infrared ZnGeP2 optical parametric oscillator (ZGP-OPO). An average output power of 1.3 W was achieved with a slope efficiency of 63.3% in middle infrared ZGP-OPO.

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