Journal
IET POWER ELECTRONICS
Volume 15, Issue 7, Pages 594-604Publisher
WILEY
DOI: 10.1049/pel2.12252
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Funding
- CNPq [465640/20141]
- CAPES [23038.000776/2017-54, 001]
- FAPERGS [17/25510000517-1]
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A simple and accurate analytical model for estimating switching losses on power MOSFETs is proposed, validated through experimental results and compared to other commonly used methods. The model is recommended for applications designing converters by evaluating a variety of transistor part numbers.
A simple and accurate analytical model for the estimation of switching losses on power MOSFETs is proposed. It consists of simplifying the non-linear behaviour of Miller capacitance as a function of voltage. Experimental results are used to validate the model in the 5-500 kHz range. The proposed analytical model is compared to other frequently used methods. Results confirm the accuracy of the proposed model in different voltage levels, using four different MOSFET part numbers, spanning three technologies: SiC, superjunction, and conventional silicon. Because of its simplicity of implementation, it is especially recommended for applications that design converters by evaluating a large database of transistor part numbers.
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