Journal
IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume 37, Issue 7, Pages 8146-8156Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2022.3151111
Keywords
Insulated gate bipolar transistors; Voltage control; Logic gates; Circuit breakers; Electric breakdown; HVDC transmission; Thyristors; Current capacity; high-voltage direct current circuit breaker (DCCB); ultrahigh driving-voltage (UDV)
Categories
Funding
- National Natural Science Foundation of China [51977073]
- China Postdoctoral Science Foundation [2020M680484, 2021T140201]
- Fundamental Research Funds for the Central Universities [2021MS003]
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This article proposes an effective method to boost the current capacity of IGBTs by applying an unusually high driving voltage. Through theoretical calculations and experimental analysis, the article presents a proper driving voltage selection principle and verifies the ability of a single IGBT device to control high currents using this voltage. This method can significantly reduce the cost of HVdc circuit breakers.
High-voltage direct current (HVdc) circuit breakers based on power electronic technology usually require a large number of insulated-gate bipolar transistors (IGBTs) to achieve large-capacity breaking. The insufficient current capacity is an important reason for the excessive cost of dc circuit breakers. However, the single switching condition in the circuit breaker makes it possible for IGBTs to control the current of several times rated value in a short time. This article proposed an effective current boosting method for IGBT. By applying an unconventionally ultrahigh driving-voltage (UDV) to the gate of devices, the instantaneous current capability of IGBTs can be significantly improved. The possible failure modes and lifetime issues caused by UDV are also discussed in detail. Through comprehensive theoretical calculations and experimental analysis, a proper UDV selection principle for IGBTs in HVdc circuit breakers is proposed. The single device is verified to have the ability to control 31.2 kA current in milliseconds by using UDV. This conclusion can greatly increase the allowable working area of IGBTs, thereby significantly reducing the cost of HVdc circuit breakers.
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