4.5 Article

Optimization of the 65-nm CMOS Linear Front-End Circuit for the CMS Pixel Readout at the HL-LHC

Journal

IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 68, Issue 11, Pages 2682-2692

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2021.3117666

Keywords

CMOS front-end electronics; high-luminosity large hadron collider (HL-LHC); ionizing radiation effects; low-noise analog front-end; pixel readout chip

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The article describes the design improvements and test results of an optimized version of linear front-end, focusing on time-walk performance and threshold tuning capabilities. In the characterization of a small prototype chip, the RD53B front-end shows a significant reduction of about 10 ns in time-walk and a threshold dispersion smaller than 65 electrons r.m.s. after exposure to 1 Grad of X-rays.
The linear front-end is the analog processor chosen for the final integration into the pixel readout chip for the high-luminosity upgrade of the CMS experiment at the large hadron collider. The front-end has been included in the RD53A chip, designed by the CERN RD53 collaboration and submitted in 2017. An optimized version of the front-end has been designed, submitted, and tested in the framework of the RD53B developments. The optimization is mainly concerned with the time-walk performance of the front-end and with its threshold tuning capabilities. The article describes in detail such design improvements together with the results from the characterization of a small prototype chip including a 16 x 16 pixel matrix featuring both the RD53A and RD53B versions of the front-end. Test results show a significant reduction, about 10 ns for input signals close to the threshold, of the time-walk in the RD53B front-end, featuring a threshold dispersion smaller than 65 electrons r.m.s. after exposure to a total ionizing dose of 1 Grad of X-rays.

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