Journal
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume 69, Issue 11, Pages 4937-4950Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMTT.2021.3105436
Keywords
P-i-n diodes; Receivers; Broadband communication; Sensors; Schottky diodes; Silicon; Broadband antennas; BiCMOS; direct digital-to-impulse (D2I); heterodyne sub-THz receiver; integrated circuits; on-chip antenna; p-i-n diode; pulse; reverse recovery; Schottky barrier diode (SBD); SiGe; silicon; terahertz (THz)
Categories
Funding
- National Science Foundation Career Award Program
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This article introduces a fully integrated terahertz (THz) frequency comb/pulse radiator and a broadband frequency comb heterodyne receiver, suitable for sensing and imaging applications. By utilizing a low-phase noise off-chip source, high-frequency stability is achieved. Additionally, a dual-comb technique is demonstrated, offering a compact and cost-effective solution for dual-comb sensing applications.
This article presents a fully integrated terahertz (THz) comb/pulse radiator and a broadband frequency-comb heterodyne receiver for sensing and imaging applications. The chipset is fabricated in the GlobalFoundries 90-nm SiGe BiCMOS process. The comb radiator utilizes p-i-n diode sharp reverse recovery to generate THz frequency comb/pulses. The repetition rate of the radiated pulses is locked to a stable off-chip source, which can be adjusted to as high as 15 GHz. By using a low-phase noise off-chip source rather than an on-chip oscillator, low phase noise and high-frequency stability are achieved. The phase noise of 405-GHz tone is -82 dBc at a 10-kHz offset frequency. The radiated tones are characterized from 220 GHz up to 1.1 THz using VDI SAX modules with the measured EIRP of -11, -15, and -36 dBm at 405, 500, and 750 GHz, respectively. In addition, a THz frequency comb detector using a Schottky barrier diode passive mixer is presented. The detector uses a broadband comb as LO for heterodyne detection of any arbitrary spectrum in mm-wave/THz band by adjusting the spacing of the LO comb from 100 s of MHz up to 15 GHz with a resolution of 2 Hz. The receiver chip is characterized from 220 up to 500 GHz with the measured NF of 24.5, 36, and 44 dB at 270, 405, and 495 GHz, respectively. Moreover, a dual-comb technique using the radiator and receiver chips is demonstrated, promising a compact low-cost solution for dual-comb sensing applications. The radiator and receiver chips consume a dc power of 40 and 38 mW, respectively.
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