Related references
Note: Only part of the references are listed.Room-temperature two-terminal magnetoresistance ratio reaching 0.1% in semiconductor-based lateral devices with L21-ordered Co2MnSi
K. Kudo et al.
APPLIED PHYSICS LETTERS (2021)
Effect of Fe atomic layers at the ferromagnet-semiconductor interface on temperature-dependent spin transport in semiconductors
M. Yamada et al.
JOURNAL OF APPLIED PHYSICS (2021)
Suppression of Donor-Driven Spin Relaxation in Strained Si0.1Ge0.9
T. Naito et al.
PHYSICAL REVIEW APPLIED (2020)
Spin injection through energy-band symmetry matching with high spin polarization in atomically controlled ferromagnet/ferromagnet/semiconductor structures
Michihiro Yamada et al.
NPG ASIA MATERIALS (2020)
Room-temperature local magnetoresistance effect in n-Ge devices with low-resistive Schottky-tunnel contacts
Makoto Tsukahara et al.
APPLIED PHYSICS EXPRESS (2019)
Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices
Y. Fujita et al.
PHYSICAL REVIEW B (2019)
Pure spin current transport in a SiGe alloy
Takahiro Naito et al.
APPLIED PHYSICS EXPRESS (2018)
Local Magnetoresistance at Room Temperature in Si ⟨100⟩ Devices
Mizue Ishikawa et al.
IEEE TRANSACTIONS ON MAGNETICS (2018)
Spin transport and relaxation in germanium
Kohei Hamaya et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2018)
Observation of local magnetoresistance signals in a SiGe-based lateral spin-valve device
Michihiro Yamada et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2018)
Nonlinear Electrical Spin Conversion in a Biased Ferromagnetic Tunnel Contact
R. Jansen et al.
PHYSICAL REVIEW APPLIED (2018)
Giant Spin Accumulation in Silicon Nonlocal Spin-Transport Devices
A. Spiesser et al.
PHYSICAL REVIEW APPLIED (2017)
Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer
Shoichi Sato et al.
PHYSICAL REVIEW B (2017)
Non-local electrical spin injection and detection in germanium at room temperature
F. Rortais et al.
APPLIED PHYSICS LETTERS (2017)
Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements
Michihiro Yamada et al.
APPLIED PHYSICS EXPRESS (2017)
Spin relaxation through lateral spin transport in heavily doped n-type silicon
M. Ishikawa et al.
PHYSICAL REVIEW B (2017)
Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator
K. Sawano et al.
THIN SOLID FILMS (2016)
Temperature-independent spin relaxation in heavily doped n-type germanium
Y. Fujita et al.
PHYSICAL REVIEW B (2016)
Spin injection and detection up to room temperature in Heusler alloy/n-GaAs spin valves
T. A. Peterson et al.
PHYSICAL REVIEW B (2016)
Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium
Michihiro Yamada et al.
APPLIED PHYSICS LETTERS (2015)
Greatly enhanced generation efficiency of pure spin currents in Ge using Heusler compound Co2FeSi electrodes
Kenji Kasahara et al.
APPLIED PHYSICS EXPRESS (2014)
Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature
Tomoyuki Sasaki et al.
APPLIED PHYSICS LETTERS (2014)
Effect of CoFe insertion in Co2MnSi/CoFe/n-GaAs junctions on spin injection properties
Yuya Ebina et al.
APPLIED PHYSICS LETTERS (2014)
Local magnetoresistance through Si and its bias voltage dependence in ferromagnet/MgO/silicon-on-insulator lateral spin valves
Y. Saito et al.
JOURNAL OF APPLIED PHYSICS (2014)
Enhancement of the spin signal in permalloy/gold multiterminal nanodevices by lateral confinement
P. Laczkowski et al.
PHYSICAL REVIEW B (2012)
Local and non-local magnetoresistance with spin precession in highly doped Si
T. Sasaki et al.
APPLIED PHYSICS LETTERS (2011)
Electrical spin injection and transport in germanium
Yi Zhou et al.
PHYSICAL REVIEW B (2011)
Spin transport in multiterminal devices: Large spin signals in devices with confined geometry
H. Jaffres et al.
PHYSICAL REVIEW B (2010)
Electrical spin injection and detection in lateral all-semiconductor devices
M. Ciorga et al.
PHYSICAL REVIEW B (2009)
Spintronic effects in metallic, semiconductor, metal-oxide and metal-semiconductor heterostructures
A. M. Bratkovsky
REPORTS ON PROGRESS IN PHYSICS (2008)
Electrical injection and detection of spin-polarized carriers in silicon in a lateral transport geometry
O. M. J. van't Erve et al.
APPLIED PHYSICS LETTERS (2007)
Spin-based logic in semiconductors for reconfigurable large-scale circuits
H. Dery et al.
NATURE (2007)
Electronic measurement and control of spin transport in silicon
Ian Appelbaum et al.
NATURE (2007)
MOS-based spin devices for reconfigurable logic
Masaaki Tanaka et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
Semiconductors between spin-polarized sources and drains
A. Fert et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
Electrical detection of spin transport in lateral ferromagnet-semiconductor devices
Xiaohua Lou et al.
NATURE PHYSICS (2007)
Spintronics: Fundamentals and applications
I Zutic et al.
REVIEWS OF MODERN PHYSICS (2004)
Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor -: art. no. 184420
A Fert et al.
PHYSICAL REVIEW B (2001)