4.8 Article

Local Thermal Resistance Extraction in Monolithic Microwave Integrated Circuits

Journal

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
Volume 68, Issue 12, Pages 12840-12849

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIE.2020.3040684

Keywords

Temperature measurement; Heating systems; Transistors; Thermal resistance; Fingers; HEMTs; Frequency modulation; Functional characterization; lock-in thermography; monolithic microwave integrated circuit (MMIC)

Funding

  1. Spanish Ministry of Science, Innovation and Universities [RTI2018-098392-B-I00, PCI2020-112028]
  2. Regional Government of the Generalitat de Catalunya [2017 SGR 1384]
  3. Agencia Consejo Superior de Investigaciones Cientificas through internal research program [201950E036]

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The thermal resistance of a high electron mobility transistor (HEMT) in a monolithic microwave integrated circuit (MMIC) was noninvasively extracted using infrared thermal imaging, with power dissipation inferred for each device thanks to heat source frequency modulation. This method allowed for obtaining reasonable values for the local thermal resistance of each individual HEMT in the MMIC.
The thermal resistance of a high electron mobility transistor (HEMT) forming part of a monolithic microwave integrated circuit (MMIC) is noninvasively extracted under real working conditions (electrical and thermal) by infrared thermal imaging. The HEMT thermal resistance considers the device local maximum temperature and dissipated power. An experimental approach to this end is currently not available, as the HEMTs thermal interaction does not allow extracting its individual heat generation. Thanks to thermal field confinement offered by heat source frequency modulation, the power dissipation in each device is inferred, making feasible its individual thermal resistance extraction. As a result, reasonable values of the local thermal resistance of each individual HEMT integrated in the MMIC (i.e., 57.8 +/- 3.4 degrees C/W and 24.8 +/- 1.4 degrees C/W) are obtained in agreement with studies on discrete devices available in the literature.

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