Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 69, Issue 1, Pages 4-10Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2021.3125279
Keywords
4H-SiC; integrated SiC electronics; silicon carbide; silicon carbide CMOS; wide bandgap
Funding
- Dutch Technology Foundation (STW) part of The Netherlands Organization for Scientific Research (NWO)
- Ministry of Economic Affairs [16247]
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The wide bandgap of silicon carbide (SiC) has attracted significant interest in various research fields. A scalable and open state-of-the-art SiC CMOS technology has been developed to facilitate research on complex integrated SiC circuits, with promising potential for increasing integrated devices in future applications.
The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a low-voltage SiC technology for integrated circuits is of paramount importance. Here, we report on a scalable and open state-of-the-art SiC CMOS technology that addresses this need. An overview of technology parameters, including MOSFET threshold voltage, subthreshold slope, slope factor, and process transconductance, is reported. Conventional integrated digital and analog circuits, ranging from inverters to a 2-bit analog-to-digital converter, are reported. First yield predictions for both analog and digital circuits show great potential for increasing the amount of integrated devices in future applications.
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