Related references
Note: Only part of the references are listed.Ultra-compact, High-Frequency Power Integrated Circuits Based on GaN-on-Si Schottky Barrier Diodes
Luca Nela et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2021)
Insight into traps at Al2O3/p-GaN metal-oxide-semiconductor interface fabricated on free-standing GaN substrate
Liwen Sang et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2021)
Gallium nitride-based complementary logic integrated circuits
Zheyang Zheng et al.
NATURE ELECTRONICS (2021)
Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters
Zheyang Zheng et al.
IEEE ELECTRON DEVICE LETTERS (2021)
GaN-Based Monolithic Inverter Consisting of Enhancement- and Depletion-Mode MOSFETs by Si Ion Implantation
Hiroshi Okada et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2020)
High ION and ION/IOFF Ratio Enhancement-Mode Buried p-Channel GaN MOSFETs on p-GaN Gate Power HEMT Platform
Zheyang Zheng et al.
IEEE ELECTRON DEVICE LETTERS (2020)
A 5.8-GHz High-Power and High-Efficiency Rectifier Circuit With Lateral GaN Schottky Diode for Wireless Power Transfer
Kui Dang et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2020)
Regrowth-Free GaN-Based Complementary Logic on a Si Substrate
Nadim Chowdhury et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration
Kui Dang et al.
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS (2020)
Enhancement-Mode GaN p-Channel MOSFETs for Power Integration
Zheyang Zheng et al.
PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) (2020)
Demonstration of GaN Integrated Half-Bridge With On-Chip Drivers on 200-mm Engineered Substrates
Xiangdong Li et al.
IEEE ELECTRON DEVICE LETTERS (2019)
A > 3 kV/2.94 mΩ.cm2 and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique
Tao Zhang et al.
IEEE ELECTRON DEVICE LETTERS (2019)
GaN HEMTs with Breakdown Voltage of 2200 V Realized on a 200 mm GaN-on-Insulator(GNOI)-on-Si Wafer
Zhihong Liu et al.
2019 SYMPOSIUM ON VLSI TECHNOLOGY (2019)
First Demonstration of a Self-Aligned GaN p-FET
Nadim Chowdhury et al.
2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2019)
Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform
Gaofei Tang et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Hybrid CMOS/GaN 40-MHz Maximum 20-V Input DC-DC Multiphase Buck Converter
Eyal Aklimi et al.
IEEE JOURNAL OF SOLID-STATE CIRCUITS (2017)
GaN-on-Si Power Technology: Devices and Applications
Kevin J. Chen et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
An Experimental Demonstration of GaN CMOS Technology
Rongming Chu et al.
IEEE ELECTRON DEVICE LETTERS (2016)
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
Edward A. Jones et al.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS (2016)
Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs
Huolin Huang et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2014)
GaN on Si Technologies for Power Switching Devices
Masahiro Ishida et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
High Breakdown (> 1500 V) AlGaN/GaN HEMTs by Substrate-Transfer Technology
Bin Lu et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Integrated Circuit Implementation for a GaN HFET Driver Circuit
Bo Wang et al.
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS (2010)
Heavy doping effects in Mg-doped GaN
P Kozodoy et al.
JOURNAL OF APPLIED PHYSICS (2000)