Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 69, Issue 3, Pages 1293-1297Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2021.3138837
Keywords
Micromagnetics; Current density; Semiconductor diodes; Force; Magnetic domains; Magnetic tunneling; Magnetic multilayers; Magnetic skyrmion; micromagnetic simulation; skyrmion diode; spintronic device
Funding
- National Natural Science Foundation of China [52172272]
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This study demonstrates that the skyrmion Hall effect can be utilized to design a useful skyrmion diode, providing a promising pathway for the development of spintronic devices based on unidirectional skyrmion transport.
The skyrmion Hall effect (SkHE) is usually considered as a drawback in technological applications based on magnetic skyrmion and much effort has been made to suppress the SkHE. Instead, here we demonstrate that the SkHE can be used to design a useful skyrmion diode. Micromagnetic simulations show that, in a stripe-shaped device with a lateral asymmetry, diode-like forward breakover and reverse cutoff functions can be realized based on the current-induced motion of skyrmion. Our results may suggest a promising pathway toward the development of spintronic devices based on unidirectional skyrmion transport.
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