Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 11, Pages 5912-5915Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2021.3110830
Keywords
Neurons; Logic gates; Junctions; Voltage measurement; Micromechanical devices; Pulse measurements; Current measurement; Band-to-band tunneling (BTBT); gate-induced drain leakage (GIDL); leaky integrate-and-fire (LIF) neuron; nonoverlap; overlap; single-transistor latch (STL); single-transistor neuron; spiking neural network (SNN)
Funding
- National Research Foundation (NRF) of Republic of Korea [2018R1A2A3075302, 2019M3F3A1A03079603]
- IC Design Education Center [Electronic Design Automation (EDA) Tool and Multi-Project Wafer (MPW) Service]
- Samsung Electronics Company, Ltd. [IO201210-08017-01]
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The leaky characteristic of a 1T-neuron can be controlled by adjusting the relative position of the drain junction to the gate, tuning the gate voltage, and modulating the body doping concentration, which accelerates band-to-band tunneling.
Leaky characteristic in a leaky integrate-and-fire (LIF) neuron is important to prevent a permanent effect on a single input stimulus in an artificial neuromorphic system as well as a biological nerve. In a proposed single-transistor-based LIF neuron (1T-neuron), band-to-band tunneling (BTBT) dominates the leaky characteristic. Three methods to control the leaky characteristic of a 1T-neuron are demonstrated in this work: controlling the relative location of the drain junction edge to a gate, tuning the gate voltage (V-G), and modulating body doping concentration (N-sub). The 1T-neuron becomes leakier with a more over-lapped drain junction with the gate, decreased V-G, and increased Nsub by accelerating the BTBT.
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