Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 10, Pages 4903-4909Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2021.3106886
Keywords
Switches; Nanoelectromechanical systems; Random access memory; Nonvolatile memory; Force; Resistance; Memory management; Monolithic 3-D (M3D); nanoelectromechanical (NEM) memory switch; nonvolatile memory (NVM); ternary content-addressable memory (TCAM)
Funding
- National Research Foundation (NRF) of Korea through the Ministry of Science and ICT (MSIT) [NRF-2019M3F3A1A02072089, NRF-2021M3F3A2A01037927, NRF-2021R1A2C1007931]
- Institute for Information and Communications Technology Planning and Evaluation (IITP) through the MSIT [IITP-2020-2018-0-01421]
- Ministry of Trade, Industry and Energy (MOTIE)/Korea Semiconductor Research Consortium (KSRC) [10080575]
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The proposed tristate-nanoelectromechanical-switch-based ternary content-addressable memory (NEMTCAM) introduces a single nanoelectromechanical (NEM) memory switch replacing two static random access memory cells, resulting in significant improvements in area, power consumption, search speed, and static leakage current compared to traditional TCAM.
A tristate-nanoelectromechanical-switch-based ternary content-addressable memory (NEMTCAM) is proposed for the first time. In the proposed unit NEMTCAM cell, a single nanoelectromechanical (NEM) memory switch replaces two static random access memory cells. Due to the monolithic 3-D (M3D) integration and nonvolatile property of NEM memory switches, the proposed NEMTCAM achieves an 86.3% smaller area, 75.0% lower dynamic power consumption, and a 76.6% higher search speed than conventional ternary content-addressable memory (TCAM) in addition to a negligible static leakage current.
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