4.6 Article

Development of Highly Efficient ZnO Nanorod-Based Nontoxic Perovskite Solar Cell Using AZO Buffer Layer and Lanthanide Doping

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 69, Issue 2, Pages 622-630

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2021.3138375

Keywords

Lanthanide; perovskite; semiconductor devices; thin film; transport layer

Funding

  1. Science and Engineering Research Board (SERB) through the Department of Science and Technology (DST), Government of India [EEQ/2020/000183, SRG/2020/000461]

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This article proposes a design for a novel highly efficient ZnO nanorods and lanthanide-doped perovskite solar cell, and demonstrates its advantages through numerical simulation and performance optimization. The doping of lanthanide ions into the absorber layer successfully enhances the photovoltaic performance of the solar cell.
In this article, we propose a design for a novel highly efficient well-aligned vertically grown ZnO nanorods (ZNRs) and lanthanide (Ln(3+))-doped nontoxic CH3NH3SnI3-based perovskite solar cell (PSC). This study reports the numerical simulation and performance optimization of novel flexible hybrid PSC using aluminum-doped zinc oxide (AZO) as a buffer layer. The proposed solar cell device is designed for the flexible substrate that consists of FTO-coated PET/AZO/ZnO-NRs/CH3NH3SnI3: xLn(3+)/PTAA/Au, where CH3NH3SnI3, PTAA, and ZNRs are used as absorber layer, hole transport layer (HTL), and electron transport layers (ETLs), respectively. In this study, SCAPS-1D TCAD simulation tool is used, and the device fabrication procedure is also briefly explored. This study reports the optimization of several parameters, such as absorber defect density, interface defect density, and temperature. Our reported numerical simulation for the proposed hybrid PSC model exhibits V-OC of 1.23 V, J(SC) of 21.71 mA/cm(2), FF of 83.95%, and enhanced power conversion efficiency (PCE) of 22.50%. We have reported that after doping of Ln(3+) ion, the PSCs achieved V-OC of 1.34 V, J(SC) of 22.08mA/cm(2), FF of 86.83%, and PCE of 25.85%. This study highlights the promising potential of lanthanide ions doping into the absorber layer as it has remarkably improved the photovoltaic performance of the PSCs. The enhancement of PCE from 22.50% to 25.85% is highest for AZO/ZNRs ETL-based PSC structure.

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