Field-Effect Transistor Based on MoSi2N4 and WSi2N4 Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

The electronic properties of a field-effect transistor with two different structures of MoSi2N4 and MoSi2N4 monolayers as the channel material in the presence of biaxial strain are investigated. The band structures show that these compounds are semiconductors with an indirect bandgap. Their band gaps can be adjusted by applying in-plane biaxial strain. In the following, the variation of the energies of the valleys and corresponding effective masses with respect to the strain are explored. Finally, the strained MoSi2N4 or MoSi2N4 are used as the channel of a p-type FET and the corresponding current-voltagecharacteristic is explored. The results show that this FET has an I-ON/I-OFF ratio larger than 10(6) and sub-threshold swing (SS) in the range of 96-98 mV/dec. The I-ON/I-OFF ratio of these compounds with respect to strain are compared.

Automated summary

The electronic properties of a field-effect transistor with MoSi2N4 and MoSi2N4 monolayers as the channel material under biaxial strain are investigated. The band gaps can be adjusted by strain, and the I-ON/I-OFF ratios of these compounds also vary with strain.