Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 10, Pages 5003-5008Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2021.3101182
Keywords
Stress; HEMTs; MODFETs; Degradation; Logic gates; Wide band gap semiconductors; Transient analysis; Dynamic effects; gallium nitride; hard-switching (HSW); high-electron-mobility transistor (HEMT); hot electrons (HEs); hydrodynamic (HD) simulations; semi-ON
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This study analyzes the impact of drain field plate (FP) length on the semi-ON degradation of AlGaN/GaN HEMTs, finding that longer FP samples exhibit faster and more severe drain current decrease. Simulation results indicate a stronger hot electron trapping in longer FP samples, attributed to a different electric field distribution.
In this work, an analysis of the impact of drain field plate (FP) length on the semi- ON degradation of AlGaN/GaN high-electron-mobility transistors (HEMTs) is performed. A wafer-level characterization, by means of pulsed stress tests, reveals a faster and more severe decrease of the drain current in the linear region for the samples with longer drain FP. 2-D technology computer-aided design (TCAD) hydrodynamic simulations show that a time and field-dependent hot electrons (HEs) trapping takes place at the passivation/barrier interface. The higher drain current decrease in the longer FP samples can be ascribed to an enhanced HE trapping at the drain FP edge due to a different electric field distribution.
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