Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 11, Pages 5553-5558Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2021.3111140
Keywords
AlGaN/gallium nitride (GaN) heterostructure; continuous wave (CW) power; HEMT; in situ SiNx passivation; millimeter-wave (mm-wave) applications; ultrathin barrier (UTB)
Funding
- National Key Research and Development Program of China [2020YFB1804902]
- National Natural Science Foundation of China [61904135]
- China Postdoctoral Science Foundation [2018M640957, BX20200262]
- Nature Science Foundation of Shaanxi Province [2020JQ316]
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The study successfully fabricated submicrometer gate HEMT devices with optimized UTB AlGaN/GaN heterostructures through SiN passivation, showing great potential in both RF applications and power performance.
The submicrometer gate HEMT is fabricated with an ultrathin-barrier (UTB) AlGaN/gallium nitride (GaN) combined with in situ SiN passivation. The sheet resistance of the UTB Al0.2Ga0.8N (4 nm)/GaN heterostructure is effectively reduced by the SiNx passivation layer grown by metal organic chemical vapor deposition (MOCVD), from 6500 to 312 Omega/square. With the 20-nm stress-engineered in situ SiN, the device not only provides a large output current of 1.05 A/mm but also demonstrates promising potential on the RF applications, which gives AlGaN material two records high cutoff frequency f(T)/f(max) of 157 GHz/334 GHz for 100-nm gated device and 211 GHz/379 GHz for 70-nm gated device. During the continuous wave (CW) power measurement at 30 GHz, the 70-nm devices exhibit a large output power of 4.6 W/mm associated with a peak poweradded efficiency (PAE) of 48.1% and a gain of 11.6 dB (V-ds = 20 V), and a high PAE of 53.8% with an output power density of 1.9 W/mm and a gain of 10.8 dB (V-ds = 10 V), respectively. The huge potential of the UTB-AlGaN/GaN is demonstrated for high- frequency and large-output power applicationswhen it is combined with the in situ SiN, which is necessary for future communication systems.
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