Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 69, Issue 2, Pages 525-530Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2021.3138841
Keywords
Electric breakdown; Voltage measurement; Current measurement; Logic gates; MODFETs; Iron; HEMTs; Breakdown; GaN; high electron mobility transistor (HEMT); impact ionization; punchthrough
Funding
- Engineering and Physical Sciences Research Council (EPSRC) [EP/N031563/1]
- IQE PLC
- EPSRC [EP/N031563/1] Funding Source: UKRI
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The breakdown mechanism in 0.25-μm gate length AlGaN/GaN-on-SiC transistors is investigated using the drain current injection technique. The results show that breakdown can be divided into two stages, which are related to gate voltage levels and material characteristics.
Breakdown mechanism in 0.25-mu m gate length AlGaN/GaN-on-SiC iron doped high electron mobility transistors (HEMTs) with background carbon is investigated through the drain current injection technique. The measurement results reveal that it can be divided into two distinct stages according to the gate voltage levels. The first stage of the measured drain injected breakdown is mainly due to the initiation of the punchthrough process under the gate, and the second stage of breakdown is associated with the potential barrier between the unintentionally doped (UID) GaN and the Fe doped p-type GaN buffer layer which also has a higher carbon density. The electroluminescence (EL) results suggest that the first stage shows uniform punchthrough current flow, but localized leakage current flow associated with a snapback breakdown mechanism replaces the uniform punchthrough current flow and dominates the second stage. A 2D-TCAD simulation has been implemented and shows the current paths under uniform flow conditions.
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