Realization of Nonvolatile Multistate Memory and All 16 Boolean Logic Functions in a Single Self-Biased Magnetoimpedance Device

The integration of complete Boolean logic gate and memory in a single device is imperative to develop future computing systems beyond von Neumann architecture. Specifically, the giant magnetoimpedance (GMI) effect has drawn much attention for the high sensitive magnetic sensor applications; however, its possible application in logic-in-memory devices has been rarely explored. This work studies the butterfly-shaped hysteresis GMI effect in the self-biased magnetic heterogeneous laminate (Ni/Fe25Ni54Co15Si1B5/micro-planar coil/Fe25Ni54Co15Si1B5/micro-planar coil/Fe25Ni54Co15Si1B5/Ni) theoretically and experimentally. The proposed theoretical model based on the nonlinear constitutive model of magnetostrictive material, magnetic charge theory, and Maxwell equations indicates that the permeability of Fe25Ni54Co15Si1B5 ribbon is modulated by the varied remanent magnetostatic field and magnetostrictive stress of neighboring Ni ribbon simultaneously, which demonstrates multilevel remanent magnetoimpedance after the external magnetic field is turned off. This is useful for the nonvolatile multistate memory application. Furthermore, 16 complete nonvolatile Boolean logic functions can be also implemented in a single GMI device within three operation cycles. This study provides a promising candidate for future logic-in-memory architecture.

Automated summary

The study explores the butterfly-shaped hysteresis giant magnetoimpedance effect in a self-biased magnetic heterogeneous laminate, demonstrating the modulation of permeability in Fe25Ni54Co15Si1B5 ribbon by neighboring Ni ribbon for multilevel remanent magnetoimpedance. This can be useful for nonvolatile multistate memory application, with the possibility of implementing 16 complete nonvolatile Boolean logic functions in a single GMI device.