Robustness of Pentacene:MoS2:ZnO Ternary Blend for Optoelectronic Devices

Blending semiconductors is a cost-effective method of developing new materials with attractive features. Usually, the blend's final properties depend upon the properties of its signature materials proportion and their mixability. A ternary blend of Pentacene, MoS2 and ZnO is prepared and deposited on ITO coated glass substrate to observe its structural and optical properties. The blend is characterized with the help of X-Ray Diffraction (XRD), field emission scanning electron microscopy (FESEM) and UV-vis spectroscopy. For optimization of blend proportion, we have studied the Pentacene:MoS2:ZnO (P:M:Z) film with proportions 1:1:1, 0.5:1:1 and 2:1:1. The structural and optical analysis revealed the superior absorption and optical conductivity in film P:M:Z::2:1:1, and superior transmittance in P:M:Z::1:1:1. Such properties open an avenue for these blended materials in dynamic optoelectronic device applications. Therefore, we have further analyzed these films for photodetector device. The performance parameter such as responsivity, detectivity and external quantum efficiency (EQE) is highly dependent upon the light absorption spectrum and photomultiplication process, which confirms the robustness of optoelectronic devices on the composition sensitivity of the blend.

Automated summary

Blending semiconductors is a cost-effective method for developing new materials with attractive features, where the final properties of the blend depend on the materials' proportions and mixability. By characterizing a ternary blend of Pentacene, MoS2, and ZnO, it was found that different proportions of the blend lead to varied structural and optical properties. The performance of optoelectronic devices is highly influenced by the composition sensitivity of the blend, indicating the potential for blended materials in dynamic optoelectronic device applications.