4.6 Article

A CMOS 300-GHz Injection-Locked Frequency Tripler With a Tri-Layer Dual Coupled Line for Improved Locking Range

Journal

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSII.2021.3103736

Keywords

Oscillators; Metals; Harmonic analysis; Couplings; Ring oscillators; Power generation; Impedance; Sub-harmonic injection-locked oscillators; CMOS; sub-millimeter wave

Funding

  1. National Research Foundation of Korea (NRF) - Korean Government [NRF-2021R1A2C3009096]

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A triple-push sub-harmonic injection-locked ring tripler is introduced in this brief. The circuit converts a 100-GHz injection signal to an output signal of around 300 GHz. By employing a tri-layer dual coupled line composed of three layers of metal stack, the circuit can disturb the symmetry in the injection-locked ring tripler, leading to an enhancement in locking range.
A triple-push sub-harmonic injection-locked ring tripler is presented in this brief. The circuit converts a 100-GHz injection signal to an output signal of around 300 GHz. The circuit employs a tri-layer dual coupled line, which is composed of three layers of metal stack. The signal injection through the tri-layer dual coupled line structure disturbs the symmetry in the injection-locked ring tripler, leading to a locking range enhancement. The circuit, fabricated in a 65-nm CMOS process, achieved a locking range of up to 24 GHz with a 3-dBm injection power. A measured output power larger than -18 dBm was obtained at the free-running frequency of 302 GHz. The measured phase noise was -105 dBc/Hz at 1-MHz offset.

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