4.6 Article

A Fully Integrated Cryo-CMOS SoC for State Manipulation, Readout, and High-Speed Gate Pulsing of Spin Qubits

Journal

IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 56, Issue 11, Pages 3289-3306

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2021.3115988

Keywords

Radio frequency; Microcontrollers; Refrigerators; Qubit; Modulation; Cryogenics; Receivers; Cryo-CMOS; cryogenic; direct digital synthesis (DDS); fidelity; fin field-effect transistor (FinFET); frequency-division multiplexing; quantum computing; qubit control; radio frequency (RF) reflectometry; readout; specifications; spin qubits; two-qubit gate

Funding

  1. Intel Corporation

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This article presents a fully integrated Cryo-CMOS system on chip (SoC) for quantum computing, which includes an RF pulse modulator, a signal generator, a coherent receiver, and DACs. The SoC also integrates a microcontroller for low latency signal processing and increased flexibility in implementing quantum instruction sets.
This article presents a fully integrated Cryo-CMOS system on chip (SoC) for quantum computing. The proposed SoC integrates a radio frequency (RF) pulse modulator for qubit state manipulation, a multi-tone signal generator and a coherent receiver for qubit state readout, and 22 DACs for high-speed voltage pulsing of qubit gates. By adopting frequency division multiplexing and direct digital synthesis (DDS), the RF pulse modulator can control up to 16 qubits over a single RF line, and the readout receiver can detect the state of up to six qubits simultaneously. The proposed SoC also integrates a microcontroller for low latency on-chip signal processing and increased flexibility in implementing quantum instruction sets. A detailed analysis of qubit-state readout fidelity and the impact of finite DAC resolution on two-qubit gate fidelity is also included in this article, together with an electrical specification summary. The SoC is implemented in Intel's 22 nm FFL fin field-effect transistor (FinFET) process, and it is characterized both at room and 4 K temperatures. The performance of each specific block is measured, with the readout characterized in a loop-back configuration. Generation of the control signals required for a full Rabi oscillation experiment is also demonstrated. This article also describes the cryogenic thermalization techniques used to integrate the SoC in the dilution refrigerator and shows temperature measurements during operation.

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