InGaN Resonant Microcavity With n+-Porous-GaN/p+-GaN Tunneling Junction

InGaN-based resonant cavity light-emitting diode (RC-LED) structures with top and bottom porous-GaN distributed Bragg reflectors (DBRs) were demonstrated. Epitaxial n(+)-GaN:Si/n-GaN:Si stack structures were transformed into top/bottom porous-GaN:Si/n-GaN:SiDBRs through a doping-selective electrochemical wet etching process. The n(+)-porous-GaN/p(+)-GaN tunneling junction structure was designed for the current injecting into the InGaN active layer. The line-widths of the electroluminescence spectra were reduced from 23.3 nm at 434.0 nm to 1.9 nm at 434.1 nm due to the resonant microcavity effect.

Automated summary

In this study, InGaN-based resonant cavity light-emitting diode structures with top and bottom porous-GaN distributed Bragg reflectors were demonstrated. The electroluminescence spectra line-widths were significantly reduced due to the resonant microcavity effect, improving the performance of the devices.