4.6 Article

Voltage Transfer Characteristics of CMOS-Like Inverters for Ambipolar SnO Thin-Film Transistors

Related references

Note: Only part of the references are listed.
Article Chemistry, Multidisciplinary

Molecule Charge Transfer Doping for p-Channel Solution-Processed Copper Oxide Transistors

Ao Liu et al.

ADVANCED FUNCTIONAL MATERIALS (2020)

Article Nanoscience & Nanotechnology

Back-Channel Defect Termination by Sulfur for p-Channel Cu2O Thin-Film Transistors

Hsuan Chang et al.

ACS APPLIED MATERIALS & INTERFACES (2020)

Article Nanoscience & Nanotechnology

Switching Mechanism behind the Device Operation Mode in SnO-TFT

Alex W. Lee et al.

ADVANCED ELECTRONIC MATERIALS (2020)

Article Engineering, Electrical & Electronic

Hydrogen-Defect Termination in SnO for p-Channel TFTs

Alex W. Lee et al.

ACS APPLIED ELECTRONIC MATERIALS (2020)

Review Chemistry, Multidisciplinary

Recent Advances in Ambipolar Transistors for Functional Applications

Yi Ren et al.

ADVANCED FUNCTIONAL MATERIALS (2019)

Article Multidisciplinary Sciences

Integrated Ring Oscillators based on high-performance Graphene Inverters

Daniel Schall et al.

SCIENTIFIC REPORTS (2013)

Article Materials Science, Multidisciplinary

Designing organic and inorganic ambipolar thin-film transistors and inverters: Theory and experiment

Anita Risteska et al.

ORGANIC ELECTRONICS (2012)

Article Chemistry, Multidisciplinary

Ambipolar Oxide Thin-Film Transistor

Kenji Nomura et al.

ADVANCED MATERIALS (2011)

Article Physics, Applied

p-channel thin-film transistor using p-type oxide semiconductor, SnO

Yoichi Ogo et al.

APPLIED PHYSICS LETTERS (2008)