Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 10, Pages 1464-1467Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3107940
Keywords
Ferroelectric; antiferroelectric; HfZrO2
Categories
Funding
- Ministry of Science and Technology (MOST) [110-2218-E-003-005, 110-2218-E-A49-014-MBK, 109-2622-8-002-003]
- Taiwan Semiconductor Research Institute (TSRI)
- Nano Facility Center (NFC), Taiwan
Ask authors/readers for more resources
The bilayer-based Antiferroelectric Tunneling Junction (AFTJ) utilizing ferroelectric and dielectric materials demonstrates exceptional performance in terms of current ratio, TER, retention time, and cycling endurance, making it a promising candidate for low-power crossbar eNVM applications.
The bilayer-based Antiferroelectric Tunneling Junction (AFTJ) with ferroelectric (FE) HfZrO2 (HZO) and dielectric (DE) Al2O3 demonstrates a current ratio of >100 x, a TER (tunneling electroresistance) of >50 x, multilevel states, >10(4) sec retention, and a cycling endurance as high as 10(8). The concept of tunneling current through DE in an antiferroelectric (AFE) system enhances the capacity to modulate the current/TER ratio and makes the AFTJ feasible for low-power crossbar eNVM (embedded nonvolatile memory) applications.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
