Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 12, Pages 1841-1844Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3118384
Keywords
Domain wall current; LiNbO3; ferroelectric; single crystal thin film
Categories
Funding
- National Key Research and Development Program of China [2019YFF0301802, 2019YFB2004802, 2018YFF0300605]
- National Natural Science Foundation of China [62171415, 51975541]
- Key Research and Development Projects of Shanxi Province [20201101015]
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This study investigated the domain wall current of single crystal LiNbO3 thin film and fabricated a packaged DWC temperature sensor. The experiment showed that DWC has a negative temperature coefficient and a high current on-off ratio of 103.
Domain wall current (DWC) plays a key role in storage devices, logic devices and sensors due to its high on-off ratio and nano structure size in the era of nanoelectronics technology. In this work, the DWC of single crystal LiNbO3 thin film was studied by piezoresponse force microscope(PFM) and conducting atomic forcemicroscope (c-AFM). We mainly focus on voltage and temperature dependence of DWC which increases with the voltage and temperatures. Based on this research, the packaged DWC temperature sensor is fabricated and applied in wide temperature range. The existence of domain walls makes the current on-off ratio as high as 103 at the voltage of 15 V. Our study shows that DWC has a negative temperature coefficient (NTC) from 140 K to 500 K. The current increases from 3 pA to 57 mu A, which is attributed to the conductivity of switched domain. This work proposes a new type temperature sensor with wide temperature range and high compatibility and sensitivity. In addition, it provides support for harsh environment applications of ferroelectric domain engineering devices.
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