580 V Breakdown Voltage in Vertical Diamond Trench MOSFETs With a P--Drift Layer

This letter reports the successful demonstration of large-current and high-voltage (001) vertical-type two-dimensional hole gas (2DHG) diamond trench metal-oxide-semiconductor field-effect transistors (MOSFETs) with a p(-)-drift layer. The fabricated transistor demonstrated a maximum drain current density of 210 mA/mm, a field-effect-mobility of 61 cm(2)V(-1)s(-1), and a specific on-resistance of 23 m Omega cm(2). Moreover, a high breakdown voltage of 580 V with a gate-drain length of 10 mu m was obtained, which is the highest value reported for a vertical-type diamond MOSFET to date. These characteristics indicate that a vertical-type diamond MOSFET using a p(-)-drift layer may be used to realize a p-channel power device with a high breakdown voltage and low on-resistance.

Automated summary

This letter reports the successful demonstration of large-current and high-voltage (001) vertical-type two-dimensional hole gas diamond trench MOSFETs with a p(-)-drift layer. The fabricated transistor shows high drain current density, field-effect mobility, and low specific on-resistance, as well as a high breakdown voltage, indicating its potential as a p-channel power device.