Journal
IEEE ELECTRON DEVICE LETTERS
Volume 43, Issue 4, Pages 569-572Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3149898
Keywords
Terminal structure; organic thin-film transistors; half-Corbino; hot carrier effect
Categories
Funding
- National Sun Yat-sen University Joint Center for High Value Instruments
- Ministry of Science and Technology, Taiwan [MOST-109-2112-M-110-015-MY3]
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A terminal via structure is proposed to improve the drain-induced barrier lowering (DIBL) effect and reliability of half-Corbino organic thin-film transistors (OTFTs). The traditional structure experiences sub-channel conduction and breakdown at high drain voltages, which is inhibited by the terminal via structure.
This study proposes a terminal via structure for half-Corbino organic thin-film transistors (OTFTs) to improve drain-induced barrier lowering (DIBL) effect and reliability. A sub-channel conduction and DIBL phenomenon due to high drain voltages are observed on the I-D -V-G curves of traditional half-Corbino OTFTs. The device breaks down at a drain voltage of - 40 V. This is attributed to the strong electric field between the source/drain corner edge, which is verified by a COMSOL electric field simulation. The degradation behavior is inhibited through the terminal via structure. In addition, the terminal via structure reduces the on-current degradation by dispersing heat near the corner edge after the hot carrier effect.
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