Organic Thin Film Transistors Incorporating Recessed Electrodes on Polymer Gate Dielectric

The solution-processed inverted co-planar organic thin film transistor (OTFT) incorporating recessed source-drain-gate and polymer gate dielectric is demonstrated to realize a fully recessed device. The impact of recessed electrodes on the contact resistance (R-c) and the mobility (mu) is thoroughly investigated by comparing the performance of fully recessed devices, partially recessed (source-drain) devices and standard non-recessed devices. A reduction in R-c by two orders of magnitude and 3-fold increase in mu to attain the values of 60 k Omega-cm (without any surface treatment) and 1.5 x 10(-2)cm(2)/Vs respectively are achieved in a fully recessed device as compared to the standard non-recessed device.

Automated summary

The solution-processed inverted co-planar organic thin film transistor with recessed source-drain-gate and polymer gate dielectric demonstrates a fully recessed device. The study thoroughly investigates the impact of recessed electrodes on contact resistance and mobility.