Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 12, Pages 1890-1893Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3124823
Keywords
Electrodes; Boron; Two dimensional displays; Field effect transistors; Logic gates; Threshold voltage; Inverters; Two-dimensional (2-D) materials; complementary FET; CMOS inverter; molybdenum disulfide; hexagonal boron nitride; graphene; flexible electronics
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Funding
- General Research Fund (GRF) through the Research Grants Council (RGC) of Hong Kong [16202920]
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This study presents a complementary FET technology based on MoS2, hBN, and graphene, which demonstrates ideal electrical performance and enables high-performance CMOS inverters.
This letter demonstrates a complementary 2-D field-effect transistor (FET) technology with molybdenum disulfide (MoS2) as the active film, hexagonal boron nitride (hBN) as the gate dielectric, and graphene as the gate electrode. The active region of the n-channel (n-FET) and p-channel (p-FET) devices are formed by undoped and Nb-doped MoS2, respectively. The complementary FETs have the desirable threshold voltage polarity, similar current drive, and high on-off current ratios of more than 10(6). A complementary metal-oxide-semiconductor (CMOS) inverter has been fabricated and the measured gain is about 14 with 90% noise margin at a 2 V power supply.
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