Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process

Normally-off AIGaN/GaN MIS-HEMTs with a high threshold voltage (V-th) more than 2.5 V and a low on-resistance of 5.5 Omega.mm have been achieved by an improved regrowth technique with in-situ SiNx passivation. A thin-barrier heterojunction was used to decrease the two-dimensional electron gas (2DEG) underneath the gate, then regrown Al0.2Ga0.8N and in-situ SiNx were applied to recover 2DEG at the access regions and reduce contact resistance. The O-3-based Al2O3 and HfO2 were employed to cover the recessed-gate with low channel sheet resistances by atomic layer deposition. The other hybrid MIS-HEMT with in-situ SiNx gate interlayer also enabled a normally-off operation with a V-th hysteresis lower than 30 mV. The damage-free recessed-gate structures with in-situ SiNx as passivation and gate dielectric contribute to reducing surface scattering and interface states, resulting in a high V-th uniformity and channel mobility, low on-resistance and ti, hysteresis in normally-off GaN-based MIS-HEMTs.

Automated summary

Normally-off AIGaN/GaN MIS-HEMTs with high threshold voltage, low on-resistance and low threshold voltage hysteresis have been achieved by an improved regrowth technique with in-situ SiNx passivation. The devices utilize thin-barrier heterojunction to decrease the 2DEG underneath the gate and employ regrown Al0.2Ga0.8N and in-situ SiNx to recover 2DEG at the access regions and reduce contact resistance. The MIS-HEMTs also feature damage-free recessed-gate structures with in-situ SiNx as passivation and gate dielectric, contributing to high V-th uniformity and channel mobility, low on-resistance and hysteresis.