Effects of High-Pressure Annealing on the Low-Frequency Noise Characteristics in Ferroelectric FET

In this work, the low-frequency noise (LFN) characteristics of hafnium-zirconium oxide (HZO) ferroelectric field-effect transistors (FeFETs) with and without high-pressure forming gas annealing (HPA) treatment are investigated. The origin of 1/f noise in the FeFET without HPA is changed from carrier number fluctuation to Hooge's mobility fluctuation after wake-up due to the remote phonon scattering from the polarized HZO. Also, Hooge's parameter is increased by the program/erase (P/E) cycling-induced stress. On the contrary, only the correlated mobility fluctuation is increased after the wake-up in the FeFET with HPA. Furthermore, the LFN of the FeFET with HPA shows robustness to P/E cycling-induced stress after thewake-up, showing superb endurance performance.

Automated summary

This study investigates the low-frequency noise (LFN) characteristics of hafnium-zirconium oxide (HZO) ferroelectric field-effect transistors (FeFETs) with and without high-pressure forming gas annealing (HPA) treatment. The origin of 1/f noise in the FeFET without HPA changes from carrier number fluctuation to Hooge's mobility fluctuation after wake-up due to remote phonon scattering from the polarized HZO. Additionally, the Hooge's parameter is increased by program/erase (P/E) cycling-induced stress. On the other hand, only correlated mobility fluctuation is increased after wake-up in the FeFET with HPA. Furthermore, the LFN of the FeFET with HPA exhibits robustness to P/E cycling-induced stress after wake-up, demonstrating superb endurance performance.