Journal
IEEE ELECTRON DEVICE LETTERS
Volume 43, Issue 1, Pages 158-161Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3128998
Keywords
Mathematical models; Computational modeling; Switches; Predictive models; Silicon; Tunneling; Voltage; FTJ model; FTJ; ferroelectrics; ferroelectric model; dynamic model; multi-domain
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Funding
- Singapore Ministry of Education [R-263-000-D65-114, R-263-000-D77-112, 2017-T2-1-114]
- Applied Materials-NUS Advanced Materials Corporate Laboratory Scholarship [GOSF06000182 RS-IS R261516001592]
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The researchers have developed a comprehensive ferroelectric tunnel junction (FTJ) model that considers dynamic and multi-domain switching behaviors. By combining the Time-Dependent Landau-Ginzburg equations and the Non-Equilibrium Green Function, they were able to successfully reproduce experimental results and predict the dynamic and multi-state switching of FTJ. This model shows promise for applications in high-density data storage and analog computing.
Overcoming the drawbacks of the existing ferroelectric tunnel junction (FTJ) models which ignore the dynamic or multi-domain switching behaviors, we develop a more comprehensive FTJ model by combining the Time-Dependent Landau-Ginzburg (TDLG) equations to solve the multi-domain dynamic switching of ferroelectric layer and the Non-Equilibrium Green Function (NEGF) to solve the tunneling current. The model successfully reproduces the experimental results of our fabricated metal-ferroelectrics-insulator-semiconductor (MFIS) FTJ. This model empowers us to predict both the dynamic and multi-state switching of FTJ, showing its promise for applications in the high-density data storage and analog computing.
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