Rich Device Physics Found in Photoresponses of Low-Dimensional Photodetectors by Fitting With Explicit Photogain Theory

In this work, we employed our newly established explicit photogain theory to probe physics in nanodevices at single device level. A single fitting of the explicit photogain theory to experimental photoresponses allows us to find important device parameters including surface depletion region width W-dep, doping concentration N-A (or N-D), carrier mobility mu(p) (or mu(n)), minority recombination lifetime tau(0) and surface recombination velocity V-srv. These parameters are often difficult to calibrate using traditional semiconductor characterization techniques as the size of semiconductor devices scales down. The extracted parameters were verified with independent Hall effect measurements and other experiments. It shows that this technique is simple, nondestructive and accurate enough to probe the physics in nanodevices at single device level.

Automated summary

In this work, the explicit photogain theory was employed to study the physics in nanodevices at a single device level. By fitting the theory to experimental results, important device parameters were obtained, which are often difficult to calibrate using traditional techniques. The proposed technique is simple, nondestructive, and accurate enough for probing the physics in nanodevices.