3D AND-Type Ferroelectric Transistors for Compute-in-Memory and the Variability Analysis

Article Engineering, Electrical & Electronic

Technological Design of 3D NAND-Based Compute-in-Memory Architecture for GB-Scale Deep Neural Network

Wonbo Shim et al.

Summary: This work proposes a heterogeneous integration strategy of 3DNAND based compute-in-memory (CIM) architecture for large-scale deep neural networks, aiming at language translation models with GB-scale parameters. By utilizing wafer bonding scheme and CMOS under array (CUA), the design integrates CMOS circuits, 3D NAND cells, and high voltage (HV) transistors at different tiers effectively. The energy efficiency achieved is 1.15-19.01 tera operations per second per watt (TOPS/W) using standard 3D NAND cells.

IEEE ELECTRON DEVICE LETTERS (2021)

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Article Engineering, Electrical & Electronic

Variability Study of Ferroelectric Field-Effect Transistors Towards 7nm Technology Node

Gihun Choe et al.

Summary: This study conducted a comparative analysis on the variability of FeFET induced by process variations towards a 7 nm technology node, incorporating the effects of random ferroelectric/dielectric phase variation, metal work function variation, and line-edge roughness in TCAD simulations. The Voronoi diagram was used to realistically model the distribution of ferroelectric grains and accurately simulate the impact of phase variation on FeFET characteristics.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2021)

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Proceedings Paper Computer Science, Hardware & Architecture

Write-In-Place Operation and It's Advantages to Upgrade the 3D AND-type Flash Memory Performances

Hang-Ting Lue et al.

Summary: The novel 3D AND-type Flash memory architecture proposed for 3D NOR Flash solution introduces a write-in-place operation, which, after optimization of the BE-MANOS charge-trapping device, reduces the in-place page write time to around 110 microseconds.

2021 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW) (2021)

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Proceedings Paper Engineering, Electrical & Electronic

Introduction of 3D AND-type Flash Memory and It's Applications to Computing-in-Memory (CIM)

Hang-Ting Lue et al.

Summary: This paper introduces the recently developed 3D AND-type Flash memory for 3D NOR Flash and CIM solutions, demonstrating good device performances in endurance and retention. The advantages of 3D AND for CIM applications include high-density performance, large transistor Ion/Ioff ratio, flexible Icell adjustment, read-disturb free operation, and low random telegraph noise, which can help construct an inference accelerator supporting heavy-weight deep neural networks.

2021 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA) (2021)

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Article Engineering, Electrical & Electronic