High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing

In this letter, the carrier mobility of amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) was remarkably enhanced by the introduction of nitrogen and the formation of Zn3N2, in which the saturation field-effect mobility (mu(sat)) was 61.6 cm(2)/Vs. Annealing temperature plays a key role on the enhancement of carrier mobility. When the annealing temperature was increased to 400 degrees C, mu(sat) was reduced to 4.1 cm(2)/Vs, which was proposed to be due to the formation of defective ZnxNy based on X-ray photoelectron spectroscopy results. In addition, the a-IGZO TFT with enhanced mobility did not exhibit persistent photoconductivity behavior. The high carrier mobility could expand the application of a-IGZO TFTs to functional circuits in active-matrix displays.

Automated summary

The letter discusses how the carrier mobility of amorphous InGaZnO thin-film transistors was enhanced by introducing nitrogen and forming Zn3N2, with a saturation field-effect mobility of 61.6 cm(2)/Vs. However, annealing at 400 degrees C led to a decrease in mobility to 4.1 cm(2)/Vs due to the formation of defective ZnxNy. Additionally, the enhanced mobility of a-IGZO TFTs did not exhibit persistent photoconductivity behavior, making them suitable for functional circuits in active-matrix displays.