Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 10, Pages 1480-1483Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3106273
Keywords
Thin-film transistor; mobility; nitrogen; a-IGZO
Categories
Funding
- National Natural Science Foundation of China [61971299, 61974101]
- Suzhou Science and Technology Bureau [SYG201933]
- Natural Science Foundation of Jiangsu Province, China [SBK2020021406]
- Natural Science Foundation of the Jiangsu Higher Education Institutions of China [19KJB510058]
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The letter discusses how the carrier mobility of amorphous InGaZnO thin-film transistors was enhanced by introducing nitrogen and forming Zn3N2, with a saturation field-effect mobility of 61.6 cm(2)/Vs. However, annealing at 400 degrees C led to a decrease in mobility to 4.1 cm(2)/Vs due to the formation of defective ZnxNy. Additionally, the enhanced mobility of a-IGZO TFTs did not exhibit persistent photoconductivity behavior, making them suitable for functional circuits in active-matrix displays.
In this letter, the carrier mobility of amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) was remarkably enhanced by the introduction of nitrogen and the formation of Zn3N2, in which the saturation field-effect mobility (mu(sat)) was 61.6 cm(2)/Vs. Annealing temperature plays a key role on the enhancement of carrier mobility. When the annealing temperature was increased to 400 degrees C, mu(sat) was reduced to 4.1 cm(2)/Vs, which was proposed to be due to the formation of defective ZnxNy based on X-ray photoelectron spectroscopy results. In addition, the a-IGZO TFT with enhanced mobility did not exhibit persistent photoconductivity behavior. The high carrier mobility could expand the application of a-IGZO TFTs to functional circuits in active-matrix displays.
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