4.7 Article

A Delta-Sigma Modulator for Low-Power Analog Front Ends in Biomedical Instrumentation

Journal

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
Volume 65, Issue 7, Pages 1530-1539

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIM.2016.2534358

Keywords

Analog front end (AFE); biomedical instrumentation; delta-sigma modulator (DSM); dual-integrating DSM (DI-DSM); preamplifier

Funding

  1. Samsung Electronics, South Korea
  2. Basic Science Research Program within the Ministry of Education through the National Research Foundation of Korea [2013R1A1A2011973]
  3. National Research Foundation of Korea [2013R1A1A2011973] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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This paper presents a high-resolution dual-integrating delta-sigma modulator (DI-DSM) for low-power analog front-end (AFE) circuits in biomedical instrumentation. The AFE contains a preamplifier and a switched-capacitor DS analog-to-digital converter. The proposed DI-DSM adopts two kinds of clock frequencies: one is the same as the conventional frequency and the other is one-half of the conventional frequency, which provides sufficient settling time for critical blocks. The proposed structure reduces harmonic distortions at the output of the preamplifier, since the preamplifier is given sufficient time to charge the sampling capacitor in the DSM. The use of a lower switching frequency at the critical blocks results in a significant reduction in the power consumption of both the preamplifier and the modulator. The proposed AFE chip is fabricated in a 65-nm CMOS process. The measurement results of the modulator show a peak signal-to-noise ratio (SNR) of 81.4 dB and a peak signal-to-noise-plus-distortion ratio (SNDR) of 80.4 dB, with a power consumption of 24.8 mu W at a supply voltage of 1 V and a signal bandwidth of 10 kHz. The complete AFE chip [which includes a preamplifier, a DI-DSM, a low-dropout (LDO) regulator, and a bandgap reference circuit (BGR)] shows a measured peak SNR of 79.3 dB and a measured peak SNDR of 77.0 dB with a preamplifier power of only 46.8 mu W (and 22.3 mu W for LDO, and 36.3 mu W for BGR).

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