Journal
EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS
Volume 231, Issue 3, Pages 481-491Publisher
SPRINGER HEIDELBERG
DOI: 10.1140/epjs/s11734-021-00345-0
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Funding
- National Natural Science Foundation of China [61973200, 91848206, 61801271]
- Shandong Provincial Natural Science Foundation of China [ZR2019BF007]
- Qingdao Science and Technology Plan Project [19-6-2-9-cg]
- Taishan Scholar Project of Shandong Province of China
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This paper proposes a new XOR circuit structure using a first-order generalized memristor, a voltage follower, and a difference amplifier. The dynamic behaviors of the first-order generalized memristor model vary with different input voltages, and the non-polarity of the memristor is proven through comparative analysis of its mathematical model and physical structure. With the non-polarity of the memristor, the XOR circuit is designed and implemented in hardware, and the influence of the memristor's parameters on circuit characteristics is discussed.
This brief proposes a new XOR circuit structure which contains a first-order generalized memristor, a voltage follower and a difference amplifier. The first-order generalized memristor model exhibits different dynamic behaviors with different input voltages. The non-polarity of the generalized memristor is proved through comparative analysis of the mathematical model and physical structure of the generalized memristor. Based on the non-polarity of the generalized memristor, the XOR circuit is designed and implemented using hardware. The influence with respect to the parameters of the generalized memristor on the circuit characteristics is discussed.
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